Résumé
The photoluminescence (PL) properties of InAs/(Ga,In)(N,As) quantum dots (QDs) were analyzed and compared to those of InAs/(Ga,In)As QDs. While the PL intensity and the PL decay times of these samples are similar at low temperature, their decrease when the temperature increases is stronger in the case of InAs/(Ga,In)(N,As) QDs. This is attributed to a weaker confinement of the carriers and to the presence of structural defects as revealed by the analysis of plane-view and cross-section transmission electron microscopy images.