Résumé
We report photoluminescence experiments bringing the evidence for intervalley scattering in bulk hexagonal boron nitride. From a quantitative analysis of the defect-related emission band, we demonstrate that transverse optical phonons at the K point of the Brillouin zone assist inter-K valley scattering, which becomes observable because stacking faults in bulk hexagonal boron nitride provide a density of final electronic states. Time-resolved experiments highlight the different recombination dynamics of the phonon replicas implying either virtual excitonic states or real electronic states in the structural defects.