Abstract
This chapter aims at reviewing the recent progress in the field of mid-infrared interband lasers, focusing on the so-called antimonide technology, i.e., the III–V compound semiconductor technology based on GaSb, InAs, AlSb, InSb, and their alloys. Laser diodes operating under continuous wave at room temperature have been demonstrated in the spectral range from 1.5 up to 3.5 μm, whereas interband cascade lasers extend the range up to ∼ 6 μm. Single-frequency operation has been demonstrated with a variety of distributed feedback lasers in most of this wavelength range. In contrast, vertical-cavity surface-emitting lasers are limited to the 2–3 μm range until now. The chapter shows that GaSb-based interband lasers have matured over the last decade and are a source of choice for gas spectroscopy applications, including future integrated sensors.