Innovative simulations of heavy ion cross-sections in a 130 nm CMOS SRAM. Influence of the passivation layers and PMOS contribution

V. Correas; Frédéric Saigné; B. Sagnes; J. Boch; G. Gasiot; D. Giot; P. Roche

doi:10.1109/TNS.2007.910038

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Innovative simulations of heavy ion cross-sections in a 130 nm CMOS SRAM. Influence of the passivation layers and PMOS contribution

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Innovative simulations of heavy ion cross-sections in a 130 nm CMOS SRAM. Influence of the passivation layers and PMOS contribution

V. Correas, Frédéric Saigné, B. Sagnes, J. Boch, G. Gasiot, D. Giot and P. Roche

IEEE Transactions on Nuclear Science, Vol.54(6), pp.2413-2418

12/2007

DOI: https://doi.org/10.1109/TNS.2007.910038

Abstract

A simulation tool to predict the heavy ion cross section is proposed. A 20% average error between experimental and simulated results is shown for a SRAM in a commercial 130 nm CMOS technology. Input parameters are obtained by device or circuit simulations and no fitting parameters or empirical calibration with previous radiation testings is needed.

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Title: Innovative simulations of heavy ion cross-sections in a 130 nm CMOS SRAM. Influence of the passivation layers and PMOS contribution
Creators - without role: V. Correas - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Frédéric Saigné - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
B. Sagnes - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
J. Boch - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
G. Gasiot - STMicroelectronics
D. Giot - STMicroelectronics
P. Roche - STMicroelectronics
Publication Details: IEEE Transactions on Nuclear Science, Vol.54(6), pp.2413-2418
Identifiers: 9947058109311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-00327106