Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

I. Halidou; Z. Benzarti; T. Boufaden; B. El Jani; Sandrine Juillaguet; M. Ramonda

doi:10.1016/j.mseb.2004.02.002

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Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

Journal article

Peer reviewed

Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment

I. Halidou, Z. Benzarti, T. Boufaden, B. El Jani, Sandrine Juillaguet and M. Ramonda

Materials Science and Engineering: B, Vol.110, pp.251-255

2004

DOI: https://doi.org/10.1016/j.mseb.2004.02.002

Abstract

MOVPE

SiN treatment

reflectivity

AFM

photoluminescence

CHEMICAL-VAPOR-DEPOSITION

DISLOCATION DENSITY

YELLOW LUMINESCENCE

OPTICAL-PROPERTIES

UNDOPED GAN

THIN-FILMS

SURFACE

GAN/SAPPHIRE

OVERGROWTH

REDUCTION

In this paper, the influence of silane flow on metalorganic vapour phase epitaxy (MOVPE) grown GaN on sapphire substrate by an in situ SiN treatment has been investigated. A flow of 10 sccm with treatment duration of 120 s appears to be the optimal value and improves the crystal quality. The dislocation density, determined by atomic force microscopic (AFM), is as low as 5 x 10(8) cm(-2). A reduction of I-2 full width at half maximum (FWHM) to 4 meV and an increase of both BE/YL and BE/DAP intensity ratio are also obtained. (C) 2004 Elsevier B.V. All rights reserved.

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Title: Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment
Creators - without role: I. Halidou - University of Monastir
Z. Benzarti - University of Monastir
T. Boufaden - University of Monastir
B. El Jani - University of Monastir
Sandrine Juillaguet - Université de Montpellier
M. Ramonda - Université de Montpellier
Publication Details: Materials Science and Engineering: B, Vol.110, pp.251-255
Identifiers: 9936368509311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00543759