Influence of Carbon Incorporation on the Low Frequency Noise of Si/SiGe: C HBTs based on 0.25 mm BiCMOS Technology

P Benoit; J Raoult; C Delseny; F Pascal; J Vildeuil; B Szelag; A Monroy

Article de revue

Influence of Carbon Incorporation on the Low Frequency Noise of Si/SiGe: C HBTs based on 0.25 mm BiCMOS Technology

P Benoit, J Raoult, C Delseny, F Pascal, J Vildeuil, B Szelag et A Monroy

Noise and Fluctuations : 18th International Conference on Noise and Fluctuations, ICNF 2005, Salamanca, Spain, 19-23 September 2005, Vol.780, pp.257-260

19/09/2005

Résumé

We studied the influence of carbon concentration on the low frequency noise (LFN) of Si/SiGe:C Heterojunction Bipolar Transistors (HBTs). For low and medium concentrations, the same level and evolution of 1/f noise versus bias and geometry is observed. The associated figure of merit, Kb, is closed to 4.10-9mm2. In this case, noise is mainly generated in the intrinsic transistor at the emitter-base junction. At higher carbon concentration, degradation of the DC and LFN parameter is observed.

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Détails

Titre: Influence of Carbon Incorporation on the Low Frequency Noise of Si/SiGe: C HBTs based on 0.25 mm BiCMOS Technology
Créateurs - sans rôle: P Benoit
J Raoult
C Delseny
F Pascal
J Vildeuil
B Szelag
A Monroy
Détails de publication: Noise and Fluctuations : 18th International Conference on Noise and Fluctuations, ICNF 2005, Salamanca, Spain, 19-23 September 2005, Vol.780, pp.257-260
Identifiants: 99162128409311
Unité académique: Institut d'Electronique et des Systèmes - IES
Langue: English
Type de ressource: Journal article