Résumé
We propose the use of strained InAs/Ga(0.47)In(0.53)As quantum wells (QWs) for light emission in the technologically important mid-IR wavelength range. Temperature dependent photoluminescence measurements on single QWs demonstrate that light emission at room temperature is obtained from all samples having InAs QW widths between 2 and 23 monolayers. Luminescence up to 2.4 microns is obtained at 300 K, which is the longest wavelength achieved so far for QWs grown on InP. These results demonstrate the potential of the InAs/Ga(0.47)In(0.53)As QW materials system for the fabrication of optoelectronic devices operating in the mid-IR. (Author)