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InAs/AlSb quantum cascade lasers emitting below 3 μm
Journal article   Peer reviewed

InAs/AlSb quantum cascade lasers emitting below 3 μm

J. Devenson, R. Teissier, O. Cathabard and A. N. Baranov
Applied Physics Letters, Vol.90(11)
2007

Abstract

indium compounds aluminium compounds III-V semiconductors quantum cascade lasers stimulated emission laser modes
Quantum cascade lasers emitting below 3 μm are demonstrated. The lasers based on the InAs/AlSb material system emit at 2.95-2.97 μm in pulsed mode with threshold current densities near 3 kA/cm2 at 84 K and operate up to room temperature. No degradation has been observed in laser performances compared with InAs/AlSb quantum cascade lasers emitting at 3.14-3.35 μm. The obtained results show no influence of the L valley in InAs on operation of these short wavelength quantum cascade lasers
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