Abstract
The influence of carbon concentration on the low-frequency noise (LF noise) of Si/SiGe:C/Si heterojunction bipolar transistors (HBTs) is investigated. When carbon is incorporated into these HBTs, representative noise spectra of the input current spectral density SIB show significant generation-recombination (GR) components. On the other hand, for transistors without carbon incorporation, no GR components were observed. When only 1/f noise component is observed, the 1/f noise level is found to be independent of the carbon concentration and the associated figure of merit of the normalized noise magnitude KB has a very good value of ~4×10−10 µm2. In order to relate the 1/f noise and the high-frequency performance of the transistor, we studied and modeled the figure of merit defined as the ratio fc/fT (fc is the low-frequency corner frequency and fT the unity current-gain frequency). Then we performed a detailed analysis of the GR components associated with the presence of the carbon. We found that the observed Lorentzian spectra are associated with random telegraph signal (RTS) noise. However, no RTS noise was measured in carbon-free devices. It is believed that the RTS noise is due to electrically active defects formed by the addition of carbon, typically observed for concentrations above the bulk solid solubility limit in silicon. The RTS amplitude (DeltaIB) is found to scale with the base current, to decrease exponentially with temperature, and to be independent of the carbon concentration. The mean pulse widths (tH,tL) of the RTS are found to decrease rapidly with bias voltage, as 1/exp(qVBE/kT) or stronger. Our results confirm that electrically active C-related defects are located in the base-emitter junction, and the RTS amplitude is explained by a model based on voltage barrier height fluctuations across the base-emitter junction induced by trapped carriers in the space charge region. The observed bias dependence of mean pulse widths seems to indicate that two capture processes are involved, electron and hole capture. These C-related defects behave like recombination centers with deep energy levels rather than electron or hole traps involving trapping-detrapping processes