Abstract
Space or military electronic components are subject to both electromagnetic fields and total ionizing dose. This paper deals with the modification in the susceptibility to 100 MHz – 1.5 GHz signals of a discrete low frequency transistor subsequently to total ionizing dose deposition. The electromagnetic susceptibility is investigated on both non-irradiated and irradiated transistors mounted in common emitter configuration. A synergy effect between near field electromagnetic interferences and total ionizing dose is observed.