Résumé
The impact of 1 MeV proton irradiation on 1.12 eV bandgap InGaAsN solar cells was studied through device and material characterizations. After a 10 13 p + cm −2 proton fluence, the photocurrent decreases by 28%, due to the formation of defects in both the GaAs emitter and the InGaAsN absorber. Furthermore, photoluminescence measurements suggest that the proton radiation hardness of InGaAsN increases with the nitrogen.