High temperature operation of short wavelength InAs-based quantum cascade lasers

P. Laffaille; J. C. Moreno; R. Teissier; M. Bahriz; A. N. Baranov

doi:10.1063/1.4714363

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High temperature operation of short wavelength InAs-based quantum cascade lasers

Journal article

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High temperature operation of short wavelength InAs-based quantum cascade lasers

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz and A. N. Baranov

AIP Advances, Vol.2(2)

06/2012

DOI: https://doi.org/10.1063/1.4714363

Abstract

InAs/AlSb quantum cascade lasers emitting at 3.06 and 3.22μm at room temperature has been studied. The lasers with high reflection coating on back facets operated in pulse mode up to 400 and 423 K, respectively. The obtained results showedno dramatic performance degradation of the InAs-based QCLs with decreasing emission wave length down to 3μm

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Title: High temperature operation of short wavelength InAs-based quantum cascade lasers
Creators - without role: P. Laffaille - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
J. C. Moreno - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
R. Teissier - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
M. Bahriz - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
A. N. Baranov - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
Publication Details: AIP Advances, Vol.2(2)
Identifiers: 9942509509311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-01620379