Résumé
We have studied the influence of the InP-substrate temperature ranging from 460 to 600°C on the structural and optical properties of Al
0.48In
0.52As ternary layers grown by molecular beam epitaxy. A high growth temperature of 600° C results in both high structural perfection and excellent optical performance of the material. The observed narrow linewidth of double-crystal X-ray diffraction peaks demonstrates the improvement of the crystalline quality. The narrow linewidth of the bound exciton luminescence eak at 6 K shows the enhancement of the alloy homogeneity. The high integrated luminescence efficiency obtained even at 120 K reveals the reduction of non-radiative recombination centers.