Résumé
We successfully fabricated interband cascade lasers (ICLs) emitting at 4.7 mu m on GaSb, GaAs, and Si substrates, demonstrating threshold current densities between 212 and 288 A/cm2 in pulsed operation at room temperature. While ICLs on mismatched substrates exhibited higher series resistance, they showed lower thermal resistance, suggesting that reducing series resistance could improve device performance. All lasers operated in continuous-wave mode up to 30 degrees C, and aging tests on ICLs grown on Si over 500 hours showed no performance degradation. These results confirm the tolerance of ICLs to dislocations, even at longer wavelengths.