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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.
Journal article   Peer reviewed

High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.

Pierre Lefebvre, Aurélien Morel, Mathieu Gallart, Thierry Taliercio, Jacques Allègre, Bernard Gil, Henry Mathieu, Benjamin Damilano, Nicolas Grandjean and Jean Massies
Applied Physics Letters, Vol.78(9)
26/02/2001

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