Abstract
This paper investigates laser and heavy ion irradiation effects on Perpendicular Magnetic Anisotropy Spin Transfer Torque Magnetic Tunnel Junction devices (PMA STT-MTJ). The Radiative campaign will take place at the Université Catholique de Louvain (UCL) facility in April 2020. The considered devices consist of STT p-MTJs purely magnetic memories and they were fabricated using the most advanced CoFeB-MgO MTJ technology. Single-event upset (SEU) tolerance and modification of magnetic properties will be deeply investigated and presented in the final paper.