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Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts
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Heavily p-Type Doping of Bulk 6H-SiC and 3C-SiC Grown from Al-Si Melts

Frédéric Mercier, Irina G. Galben-Sandulache, Maya Marinova, Georgios Zoulis, Thierry Ouisse, Efstathios K. Polychroniadis et Didier Chaussende
Materials Science Forum, Vol.645-648, pp.59-62
Materials Science Forum
01/01/2010
DOI: https://doi.org/10.4028/www.scientific.net/MSF.645-648.59

Résumé

Liquid Phase Epitaxy (LPE) Raman Spectroscopy TEM
We report in this work, the solution growth of heavily p-type doped 3C-SiC and 6H-SiC. Description of the 3C and 6H-SiC crystals in terms of defects and resistivity are presented and discussed with respect to growth conditions such as temperature, Al content in the melt and seed polarity. Crystals and thick layers are investigated by means of TEM, NDIC microscopy and Raman.

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