Growth parameters effect on thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor

Journal article

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A. Al Bayaz, Alain Giani, M. Al Khalfioui, A. Foucaran, F. Pascal-Delannoy and Alexandre Boyer

Journal of Crystal Growth, Vol.258(1-2), pp.135-140

10/2003

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Title: Growth parameters effect on thermoelectric characteristics of Bi2Se3 thin films grown by MOCVD system using Ditertiarybutylselenide as a precursor
Creators - without role: A. Al Bayaz - Université de Montpellier
Alain Giani - Université de Montpellier
M. Al Khalfioui - Centre National de la Recherche Scientifique
A. Foucaran - Université de Montpellier
F. Pascal-Delannoy - Centre National de la Recherche Scientifique
Alexandre Boyer - Université de Montpellier
Publication Details: Journal of Crystal Growth, Vol.258(1-2), pp.135-140
Identifiers: 9947179909311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00327154