Abstract
Crystallization of GaN by High Nitrogen Pressure Solution method in multi-feed-seed (MFS) configuration without intentional doping results in:(1) Growth of strongly n-type crystals with free electron concentration increasing with growth temperature in ranges of 2-6x1019 cm-3 and 1350-1430 °C, (2) stable growth on Ga-polar surface and unstable growth on N-pola rsurface ,crystals slightly brown, (3) improvement of (0001) crystallographic planes curvature (flattening) with respect to bowing oft hese planes in the seed crystals. The addition of magnesium into the growth solution causes strong compensation of freeelectrons in the crystals. Therefore, highly resistive GaN crystals can be grown. In this work, the crystallization of Mg doped GaN on flat 1 in. seeds (substrates) grown by HVPE in MFS configuration has been studied.