Abstract
The optical response of the intersubband excitation of multiple InAs/AlSb quantum wells embedded in a planar semiconductor microcavity has been studied through angle-dependent reflectance measurements. Using a resonator based on total internal reflection, a strong coupling is demonstrated between the intersubband optical transition and the cavity photon, with the attendant formation of intersubband polaritons. A giant vacuum-Rabi splitting 2ΩR was observed both at liquid helium temperatures (View the MathML source) as well as at 300 K (View the MathML source), for a transition energy View the MathML source. The observed ratio View the MathML source is a record high value (14%) for any strongly-coupled systems, and demonstrates the huge potential of this material for the achievement of the ultra-strong coupling regime predicted theoretically.