Abstract
Chemical warfare agents including nerve agents, e.g., sarin, are part of the organophosphorous compounds group known for their extreme lethal potency towards humans. With increasing risks of exposure to these molecules, there is a need for sensitive and selective detection. Infrared absorption spectroscopy is a powerful technique for the identification of molecules by probing their vibro-rotational molecular resonances. However,infrared light wavelength and molecule absorption cross-section dimensions mismatch, significantly hampering light-matter interaction especially at low concentrations, therefore lowering the sensitivity. To overcome this challenge, we propose a rapid chemistry-free III–V semiconductors InAsSb plasmonic sensor working in the mid-infrared with ribbon-shape nano-antennas associated to a confined enhanced electric field at thenanoscale. Exploiting well-known Salisbury perfect absorber structure coupled to an epsilon-near-zero layer benefit both spectral and spatial overlap, two required conditions for surface-enhanced infrared spectroscopy. Finite difference time domain and rigorous coupled-wave analysis coupled to Drude formalism were performed to design the sensor. The plasmonic sensor was exposed to hundreds of ppm-level concentration vapors of dimethyl methylphosphonate, known as DMMP, a commonly used sarin simulant. We determined that DMMP bound to the sensor native oxide to form a 5 Å estimated monolayer. The sensor response results from the coupling between surface plasmons and DMMP molecular vibrations upon adsorption at resonances frequency. Further simulations confirmed experimental results. This work demonstrates the application ofIII–V semiconductor plasmonics for gas sensing of complex molecules exploiting surface-enhanced infrared absorption.