Abstract
We have investigated the potential of GaSb-based lasers for emission at 1.55 mu m and monolithic integration on silicon. We designed an active region based on strained Ga0.8In0.2Sb quantum-wells aiming a good carrier confinement. To validate this design, the active region was first used in edge-emitting lasers grown on GaSb substrates. Continuous-wave operation at 1.56 mu m has been achieved up to 45 degrees C. The same laser structure grown on Si substrate showed room-temperature operation in pulsed regime at 1.55 mu m with a threshold current density of 5 kA/cm(2).