Abstract
p and n GaSb layers have been grown on GaSb and semi-insulating GaAs substrates by Metal Organic Chemical Vapor Deposition (MOCVD) method ; the lowest doping levels obtained are : p = 2 x 1016 cm-3, n = 8 x 1015cm-3. P type Ga1-xInxAsySb1-y layers have also been fabricated by MOCVD with a composition insuring the photodetection at a wavelength of 2.5µm. The properties of the layers and of the as grown junctions are described.