Abstract
We demonstrate that a careful optimization of the molecular-beam-epitaxy growth conditions allows us to obtain high-quality GaInNAS/GaAs quantum-well (QW) heterostructures exhibiting a perfect two-dimensional microstructure at high In and N contents. Room-temperature emission is achieved up to 1.61 and 1.51 μm for as-grown and annealed samples, respectively. High-resolution x-ray diffraction and transmission electron microscopy reveal that post-growth annealing does not affect the QW composition and width. This confirms that the GaInNAs semiconducting material is well suited for emission in the telecommunication wavelength range near 1.55 μm.