- Title
- Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature
- Creators - without role
- A. N. Imenkov - Ioffe InstituteV. V. Sherstnev - Ioffe InstituteM. A. Sipovskaya - Ioffe InstituteA. P. Astakhova - Ioffe InstituteE. A. Grebenshchikova - Ioffe InstituteA. M. Monakhov - Ioffe InstituteK. V. KalininaG. Boissier - Université de Montpellier, Institut d'Electronique et des Systèmes - IESR. Teissier - Université de Montpellier, Institut d'Electronique et des Systèmes - IESA. N. Baranov - Université de Montpellier, Institut d'Electronique et des Systèmes - IESYu. P. Yakovlev - Ioffe Institute
- Publication Details
- Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, Vol.35(9), pp.857 - 860
- Identifiers
- 9946776509311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01618177
Journal article
Frequency-tuned semiconductor whispering-gallery-mode laser (λ = 2.35 µm) operating at room temperature
Pis'ma v Zhurnal Tekhnicheskoi Fiziki / Technical Physics Letters, Vol.35(9), pp.857 - 860
09/2009
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