Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution

A. Ribayrol; Dominique Coquillat; Rm de La Rue; Sk Murad; Cdw Wilkinson; Pascal Girard; Olivier Briot; Roger Aulombard

Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution

Journal article

Peer reviewed

Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution

A. Ribayrol, Dominique Coquillat, Rm de La Rue, Sk Murad, Cdw Wilkinson, Pascal Girard, Olivier Briot and Roger Aulombard

Materials Science and Engineering: B, Vol.59, pp.335-339

1999

Abstract

GaN

reactive ion etching

CH4/H-2

microstructures

atomic force microscopy

photoluminescence

We report the fabrication of submicon-scale structures using high resolution etching to transfer patterns from PMMA into GaN with an intermediate mask consisting of a bilayer of titanium and SiNx. Atomic force microscopy measurements showed the high quality of the structures etched in CH4/H-2 as well as an erosion of the mask. The low temperature photoluminescence measured on the etched structures was almost as strong as that from the unetched surface. (C) 1999 Elsevier Science S.A. All rights reserved.

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Title: Fabrication and photoluminescence of GaN sapphire submicron-scale structures with nanometre scale resolution
Creators - without role: A. Ribayrol
Dominique Coquillat - Groupe d'étude des semiconducteurs
Rm de La Rue
Sk Murad
Cdw Wilkinson
Pascal Girard
Olivier Briot - Groupe d'étude des semiconducteurs
Roger Aulombard - Groupe d'étude des semiconducteurs
Publication Details: Materials Science and Engineering: B, Vol.59, pp.335-339
Identifiers: 9938421409311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-00546198