Résumé
Nonvolatile memory based on FeFETs demonstrates outstanding energy management capabilities, making it highly promising for energy-harvesting and battery-powered Internet of Things applications. Concurrently, the reduction in transistor dimensions and the increased integration of semiconductor circuits are intensifying the requirements for circuit robustness with protection against soft errors. In this paper, an innovative nonvolatile and single-node-upset-recovery latch, namely FN2LD-1, which does not require any additional control signals, is proposed. In addition, to further address the double-node-upset (DNU) threat in radiative environments, this paper also presents for the first time a FeFET-based nonvolatile and DNU-tolerant latch, namely FN2LD-2. Simulation results based on Cadence Virtuoso validate that the proposed latches provide nonvolatility and nodeupset-recovery with low overhead. Compared with alternative nonvolatile latches, FN2LD-1 reduces delay by 67.54 % and delay-power-area product by 25.47 % on average, and FN2LD-2 reduces delay by 82.87 % and delay-power-area by 9.88 % on average, respectively.