Abstract
A theoretical investigation and experiments on the noise spectra of lightly doped p-type Si (boron) at 77 K are presented. Noise spectra in the high-frequency range 0.22 less-than-or-equal-to f less-than-or-equal-to 10.5 GHz have been measured at different electric fields 100 less-than-or-equal-to E less-than-or-equal-to 2500 V/cm for two acceptor concentrations N(A) of 4 X 10(14) and 3 X 10(15) cm-3. The experimental results are interpreted within a Monte Carlo simulation, which includes at a microscopic level the mechanism of generation and recombination from impurity centers. The different sensitivity on the parameters in fitting first- and second-order transport coefficients is shown to provide a formidable check to support the physical plausibility of the model used.