- Title
- Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices
- Creators - without role
- Frédéric Saigné - Université de MontpellierL. Dusseau - Université de MontpellierJ. Fesquet - Université de MontpellierJ. Gasiot - Université de MontpellierR. Ecoffet - Centre National d'Études SpatialesJ.P. David - Office National d'Études et de Recherches AérospatialesR.D. Schrimpf - Vanderbilt UniversityK.F. Galloway - Vanderbilt University
- Publication Details
- IEEE Transactions on Nuclear Science, Vol.44(6), pp.2001 - 2006
- Identifiers
- 9946464409311
- Academic Unit
- Université de Montpellier
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01801563
Journal article
Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices
IEEE Transactions on Nuclear Science, Vol.44(6), pp.2001 - 2006
2006
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