Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs

Journal article

Peer reviewed

Frédéric Saigné, L. Dusseau, J. Fesquet, J. Gasiot, R. Ecoffet, R.D. Schrimpf and K.F. Galloway

IEEE Transactions on Nuclear Science, Vol.47(6), pp.2329 - 2333

2000

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Title: Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs
Creators - without role: Frédéric Saigné - Université de Reims Champagne-Ardenne
L. Dusseau - Université de Montpellier
J. Fesquet - Université de Montpellier
J. Gasiot - Université de Montpellier
R. Ecoffet - Centre National d'Études Spatiales
R.D. Schrimpf - Vanderbilt University
K.F. Galloway - Vanderbilt University
Publication Details: IEEE Transactions on Nuclear Science, Vol.47(6), pp.2329 - 2333
Identifiers: 9937113709311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-01801625