Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

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Frédéric Saigné, L. Dusseau, L. Albert, J. Fesquet, J. Gasiot, J. David, R. Ecoffet, R. Schrimpf and K. Galloway

Journal of Applied Physics, Vol.82(8), pp.4102 - 4107

15/10/1997

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Title: Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures
Creators - without role: Frédéric Saigné - Université de Montpellier
L. Dusseau - Université de Montpellier
L. Albert - Université de Montpellier
J. Fesquet - Université de Montpellier
J. Gasiot - Université de Montpellier
J. David - Office National d'Études et de Recherches Aérospatiales
R. Ecoffet - Centre National d'Études Spatiales
R. Schrimpf - Vanderbilt University
K. Galloway - Vanderbilt University
Publication Details: Journal of Applied Physics, Vol.82(8), pp.4102 - 4107
Identifiers: 9946464909311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-01801565