Excitonic parameters of GaN studied by time-of-flight spectroscopy

Journal article

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Peer reviewed

T. V. Shubina, A. A. Toropov, G. Pozina, J. P. Bergman, M. M. Glazov, Nikolay A. Gippius, Pierre Disseix, Joël Leymarie, Bernard Gil and Bo Monemar

Applied Physics Letters, Vol.99

12/09/2011

Abstract

GaN

Excitonic parameters of GaN studied by time-of-flight spectroscopy

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Title: Excitonic parameters of GaN studied by time-of-flight spectroscopy
Creators - without role: T. V. Shubina - A.F. Ioffe Physical-Technical Institute
A. A. Toropov - A.F. Ioffe Physical-Technical Institute
G. Pozina - Linköping University
J. P. Bergman - Department of Science and Technology [Linköping]
M. M. Glazov - A.F. Ioffe Physical-Technical Institute
Nikolay A. Gippius - Centre National de la Recherche Scientifique
Pierre Disseix - Centre National de la Recherche Scientifique
Joël Leymarie - Centre National de la Recherche Scientifique
Bernard Gil - Université de Montpellier, Laboratoire Charles Coulomb - L2C
Bo Monemar - Linköping University
Publication Details: Applied Physics Letters, Vol.99
Identifiers: 9942116409311
Academic Unit: Laboratoire Charles Coulomb - L2C
Language: English
Resource Type: Journal article
Local Fields: hal-00633634