Abstract
In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation.