Abstract
The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25°C to 150°C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.