A. Semiconductors D. Electronic band structure D. Electronic states (localized) E. Light absorption and reflection E. Strain, high pressure
We propose an elementary description of the optical properties of GaAsN alloys in terms of a perturbation of the GaAs band structure. It accounts for the effect of alloying and for the pressure dependence of the different transition energies.
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Titre
Elementary description of the optical properties of GaAsN alloys with small nitrogen content
Créateurs - sans rôle
Bernard Gil - Université de Montpellier
Détails de publication
Solid state communications, Vol.114(12), pp.623-626