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Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields.
Journal article   Peer reviewed

Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields.

Youness El Khalifi, Pierre Lefebvre, Jacques Allègre, Bernard Gil, Henry Mathieu and T. Fukunaga
Solid State Communications, Vol.75(8)
01/08/1990

Abstract

Optical properties of (1 1 3)-grown GaAs-(GaAl)As single quantum wells (SQW's) have been studied by wavelength- and piezomodulated spectroscopy. A supermodulation of light hole states is observed in piezomodulation spectroscopy. The theoretical methods required to compute the envelope functions and the stress dependence of the transition energies are detailed. A close agreement is obtained between the experimental observations and the theoretical predictions.
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