Electronic Structure and Optical Properties of (Ga, In)As–(Ga, Al)As Quantum Wells and Superlattices under Internal and External Strain Fields

Bernard Gil; Philippe Boring

doi:10.7567/JJAPS.32S1.93

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Electronic Structure and Optical Properties of (Ga, In)As–(Ga, Al)As Quantum Wells and Superlattices under Internal and External Strain Fields

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Electronic Structure and Optical Properties of (Ga, In)As–(Ga, Al)As Quantum Wells and Superlattices under Internal and External Strain Fields

Bernard Gil et Philippe Boring

Japanese Journal of Applied Physics, Vol.32(S1), pp.93-100

01/01/1993

DOI: https://doi.org/10.7567/JJAPS.32S1.93

Résumé

We present a detailed study of the electronic structure and optical properties of (Ga,In)As-(Ga,AI)As strained-layer quantum wells and superlattices grown along either the (001) and (111) directions.

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Titre: Electronic Structure and Optical Properties of (Ga, In)As–(Ga, Al)As Quantum Wells and Superlattices under Internal and External Strain Fields
Créateurs - sans rôle: Bernard Gil
Philippe Boring
Détails de publication: Japanese Journal of Applied Physics, Vol.32(S1), pp.93-100
Identifiants: 99147520309311
Unité académique: Laboratoire Charles Coulomb - L2C
Langue: English
Type de ressource: Journal article