Abstract
This work investigates the determination of thermal boundary conditions for electro-thermal simulations in case of short duration stressing event for SOI devices. An analysis of the heat flow inside the structure is given showing an important thermal role of contacts in deep submicron SOI devices. These boundary conditions are applied to ISE simulations of a partially depleted 130nm SOI diode during an ESD event and a good matching with TLP experimental results has been obtained.