Abstract
SIPOS mesa power transistors with large negative bevel angle, obtained by chemical etching, have been electrically tested especially using Scanning Electron Microscopy (S.E.M.) in Electron Beam Induced Current (E.B.I.C.) mode. Multiplication curves can be obtained in the space charge region when the beam scans over the reverse biased collector-base junction which allows the determination of the electric field repartition as function of reverse bias (when a multiplication effect occurs).