Abstract
This paper presents an analysis of dynamic faults in core-cell of SRAM memories. These faults may appear as the consequence of resistive-open defects that appear more and more frequently in VDSM technologies. In particular, the study concentrates on those defects that generate dynamic Read Destructive Faults, dRDFs. In this paper, we demonstrate that read or write operations on a cell involve a stress on the other cells of the same word line. This stress, called Read Equivalent Stress (RES), has the same effect than a read operation. On this basis, we propose to modify the well known March C-, which does not detect dRDFs, into a new version able to detect them. This is obtained by changing its addressing order with the purpose of producing the maximal number of RES. This modification does not change the complexity of the algorithm and its capability to detect the former target faults.