Effects of p-doping on the thermal sensitivity of individual Si nanowires

Journal article

Peer reviewed

A. Brioude, D. Cornu, P. Miele, C. Mouchet, J.-P Simonato and E. Rouvière

Applied Physics Letters, Vol.93(19)

10/11/2008

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Title: Effects of p-doping on the thermal sensitivity of individual Si nanowires
Creators - without role: A. Brioude - Université Claude Bernard Lyon 1
D. Cornu - Université de Montpellier, Institut Européen des Membranes - IEM
P. Miele - Laboratoire des Multimatériaux et Interfaces
C. Mouchet - CEA LITEN
J.-P Simonato - CEA LITEN
E. Rouvière - CEA Grenoble
Publication Details: Applied Physics Letters, Vol.93(19)
Identifiers: 9945062909311
Academic Unit: Institut Européen des Membranes - IEM
Language: English
Resource Type: Journal article
Local Fields: hal-01597222