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Effect of holes on the dynamic polarization of nuclei in semiconductors
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Effect of holes on the dynamic polarization of nuclei in semiconductors

Adalberto Brunetti, Maria Vladimirova, Denis Scalbert, Hervé Folliot et Alain Le Corre
Physical Review B: Condensed Matter and Materials Physics (1998-2015), Vol.73
2006

Résumé

INP RESONANCE SPIN NMR
In semiconductors optically enhanced polarization of nuclei is known to be primarily due to photoexcited electrons. We show that holes play a role in this process via the spin-dependent recombination of the carriers. Our results are obtained in n-type InP where spin-dependent recombination leads to the inversion of the nuclear field direction due to the donor spins cooling under optical excitation.

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