- Title
- Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors
- Creators - without role
- E. Starikov - Semiconductor Physics Institute (Vilnius)P. Shiktorov - Semiconductor Physics Institute (Vilnius)V. Gružinskis - Semiconductor Physics Institute (Vilnius)H. Marinchio - Université de Montpellier, Institut d'Electronique et des Systèmes - IESC. Palermo - Université de Montpellier, Institut d'Electronique et des Systèmes - IESL. Varani - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
- Publication Details
- Solid-State Electronics, Vol.114, pp.141 - 147
- Identifiers
- 9944895709311
- Academic Unit
- Institut d'Electronique et des Systèmes - IES
- Language
- English
- Resource Type
- Journal article
- Local Fields
- hal-01638349
Journal article
Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors
Solid-State Electronics, Vol.114, pp.141 - 147
12/2015
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