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ELECTROREFLECTANCE AND BAND STRUCTURE OF ZnSiAs2-xPx ALLOYS
Journal article   Open access

ELECTROREFLECTANCE AND BAND STRUCTURE OF ZnSiAs2-xPx ALLOYS

J. Gallay, A. Deschanvres, Sophie Gaillard and C. Alibert
Journal de Physique Colloques, Vol.36(C3), pp.C3-123-C3-127
1975

Abstract

We verify the Vegard law for ZnSiAs2-xPx solid solution. We follow by electroreflectance the Γ15 → Γ1 transitions in the entire range of composition and give the direct threshold Γ1 → Γ6 = 3.42 eV for ZnSiP2. From the quasicubic model we obtain the crystal field and the spin-orbit splitting which are compared with theory.
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