Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications

Journal article

Peer reviewed

M. Seif, F. Pascal, B. Sagnes, A. Hoffmann, S. Haendler, P. Chevalier and D. Gloria

Microelectronics Reliability, Vol.54(9-10), pp.2171 - 2175

09/2014

Files and links (1)

url

Find in HALView

1 Record Views

Title: Dispersion study of DC and Low Frequency Noise in SiGe:C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications
Creators - without role: M. Seif - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
F. Pascal - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
B. Sagnes - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
A. Hoffmann - Université de Montpellier, Institut d'Electronique et des Systèmes - IES
S. Haendler - STMicroelectronics [Crolles]
P. Chevalier - STMicroelectronics [Crolles]
D. Gloria - STMicroelectronics
Publication Details: Microelectronics Reliability, Vol.54(9-10), pp.2171 - 2175
Identifiers: 9944111309311
Academic Unit: Institut d'Electronique et des Systèmes - IES
Language: English
Resource Type: Journal article
Local Fields: hal-01643116