Résumé
We propose a method to generate steps at the surface of GaAs single crystals. This method is based on plasticity properties of GaAs. In the simple slip condition, the {$54\underline{1}$} surfaces exhibit a set of very long parallel lines (3 mm) along $<\underline{5}6\underline{1}>$. T.E.M. observations of these surfaces by replica technique allow to observe very homogeneous regions, over 20 μm2 with step height h = 200 Å and step width ℓ= 400 Å. Those geometrical dimensions are compatible with the quantum confinement and make the obtained surfaces alternate solutions to vicinal surfaces or high-index surfaces used to obtain quantum lines by direct growth.