Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE

Journal article

Peer reviewed

A. Aardvark, G. Allogho, G. Bougnot, J. David, Alain Giani, S. K. Haywood, G. Hill, A. Krier, F. Mansoor, N. J. Mason, …

Semiconductor Science and Technology, Vol.8(1S), pp.S380-S385

01/01/1993

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Title: Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE
Creators - without role: A. Aardvark
G. Allogho
G. Bougnot - Centre d'Electronique et de Micro-optoélectronique de Montpellier
J. David
Alain Giani - Centre d'Electronique et de Micro-optoélectronique de Montpellier
S. K. Haywood
G. Hill
A. Krier
F. Mansoor
N. J. Mason - Institut de Chimie de Strasbourg
R. J. Nicholas
P. Pascal-Delannoy - Centre d'Electronique et de Micro-optoélectronique de Montpellier
M. Pate
L. Ponnampalam
P. J. Walker - Department of Physics [Toronto]
Publication Details: Semiconductor Science and Technology, Vol.8(1S), pp.S380-S385
Identifiers: 9933871109311
Academic Unit: Université de Montpellier
Language: English
Resource Type: Journal article
Local Fields: hal-02048497