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Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions
Journal article   Peer reviewed

Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions

J.-M. Palau, G. Hubert, K. Coulié, B. Sagnes, M.-C. Calvet and S. Fourtine
IEEE Transactions on Nuclear Science, Vol.48(2), pp.225-231
04/2001
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