Abstract
Shunt resistance Rsh is a critical parameter for photovoltaic cells designed for low light indoor applications because it negatively affects the open circuit voltage, fill factor, and conversion efficiency. Standard CIGS cells are known to have low Rsh and are, therefore, unpromising candidates for indoor energy sources. In this paper, we extend the original work of Virtuani et al. by determining the electrical specifications of many CIGS cells with copper contents [Cu]/([Ga]+[In]) as low as 0.33 and gallium contents between 0.28 and 0.81. First, IV data are fitted by a standard single-diode electrical circuit model for each illumination, resulting in light-dependent parameters. Then, we use a procedure based on a single dataset of electrical variables, i.e., independent of light, corrected by the experimental collection function, which captures light-dependent physical mechanisms. In this way, we are able to correctly reproduce the illuminance dependence of the electrical response of the PV cell over three orders of magnitude, in particular with a fixed value of the shunt resistance. The highest Rsh is obtained with a low copper composition of 0.5, regardless of the gallium composition.