Abstract
The purpose of this paper is to develop an analytical method in order to model the noise parameters of pseudomorphic HEMT's. The principal interest of this method is that it does not need adjustable parameters and it only needs the knowledge of the components of the small signal equivalent circuit. It takes into account all the thermal noise sources associated to the resistors and the noise of the channel is described by a noise current source with a spectral density 4kT0(gm + gds). The theoretical results are compared to our measurements but also to other measurement technique involving a part of modelization (Dambrine [7]). We show that the agreement is excellent for the four noise parameters as well versus the frequency as versus the bias.